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This product is ideal for hot-swap circuits in AI servers using 48V power supplies as well as for industrial power supplies requiring battery protection.
The rapid evolution and widespread adoption of AI technologies have increased the demand for stable operation and improved power efficiency in servers equipped with generative AI and high-performance GPUs. Particularly in hot-swap circuits, power MOSFETs with wide SOA are essential to handle inrush current and overload conditions, ensuring stable operation. Furthermore, within data centers and AI servers, the transition towards 48V power supplies, which offer superior power conversion efficiency, is progressing against a backdrop of energy conservation. This necessitates the development of high-voltage, high-efficiency power supply circuits capable of meeting these demands.
Therefore, ROHM has expanded its line-up of 100V power MOSFETs ideal for hot-swap circuits in AI servers to meet market demand. The new RS7P200BM adopts a compact DFN5060-8S (5060 size) package, enabling even higher density mounting compared to the AI server power MOSFET ‘RY7P250BM’ in the DFN8080-8S (8.0mm × 8.0mm size) package, which ROHM has released in May 2025.
The new product achieves a low on-resistance (RDS(on)) of 4.0mΩ (conditions: VGS=10V, ID=50A, Ta=25°C) while maintaining wide SOA of 7.5A at a pulse width of 10ms and 25A at 1ms under operating conditions of VDS=48V. This balance of low on-resistance and wide SOA, typically a trade-off relationship, helps suppress heat generation during operation, thereby improving server power supply efficiency, reducing cooling load, and lowering electricity costs.
Mass production of the new product began in September 2025 (sample price: $5.5/unit, excluding tax). The product is also available for online purchase through online distributors such as DigiKey and Mouser.
ROHM will continue to expand its product lineup for 48V power supplies, which are increasingly adopted in applications such as AI servers. By providing highly efficient and reliable solutions, we will contribute to reducing power loss and cooling loads in data centers, as well as enhancing the high reliability and energy efficiency of server systems.
Application Examples
• 48V system AI servers and data center power hot-swap circuits;
• 48V system industrial power supplies (forklifts, power tools, robots, fan motors, etc.);
• Battery-powered industrial equipment such as AGVs (Automated Guided Vehicles);
• UPS, emergency power systems (battery backup units).
EcoMOS™ Brand
EcoMOS™ is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector. Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.
*EcoMOS™ is a trademark or registered trademark of ROHM Co., Ltd
Terminology
SOA（Safe Operating Area)
The voltage and current range within which a device can operate safely without damage. Operation beyond this safe operating area may cause thermal runaway or damage; therefore, consideration of the SOA is essential, particularly in applications where inrush current or overcurrent may occur.
Hot-swap circuit
The complete circuitry supports the hot-swap function, which enables the removal or insertion of components while the device's power supply remains active. Comprising MOSFETs, protective elements, and connectors, it suppresses inrush currents occurring during component insertion and provides overcurrent protection, thereby ensuring the safe operation of the system and connected components.
Inrush Current
The high current exceeds the rated current value that flows momentarily when switching on electronic equipment. Controlling this prevents damage to devices and stabilizes the system by reducing the load on components within the power supply circuit.
On-resistance（RDS(on)）
The resistance value between the drain and source terminals when the MOSFET is in operation (on). The lower the value, the less power loss occurs during operation.
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