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Nexperia’s Portfolio of 650 V SiC Diodes Now Addresses Automotive and A Wider Range of Industrial Applications - Nexperia announced that its class-leading 650 V, 10 A silicon carbide (SiC) Schottky diode is now automotive qualified (PSC1065H-Q) - Nexperia.com
Nexperia’s Portfolio of 650 V SiC Diodes Now Addresses Automotive and A Wider Range of Industrial Applications

 

PRZOOM - /newswire/ - Nijmegen, Netherlands, 2024/06/11 - Nexperia announced that its class-leading 650 V, 10 A silicon carbide (SiC) Schottky diode is now automotive qualified (PSC1065H-Q) - Nexperia.com.

   
 
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Nexperia today announced that its class-leading 650 V, 10 A silicon carbide (SiC) Schottky diode is now automotive qualified (PSC1065H-Q) and available in real-two-pin (R2P) DPAK (TO-252-2) packaging, making it suitable for various applications in electric vehicles and other automobiles. Additionally, in a further extension to its portfolio of SiC diodes, Nexperia is now also offering industrial-grade devices with current ratings of 6  A, 16 A, and 20 A in TO-220-2, TO-247-2, and D2PAK-2 packaging to facilitate greater design flexibility. These diodes address the challenges of demanding high voltage and high current applications including switched-mode power supplies, AC-DC and DC-DC converters, battery-charging infrastructure, motor drives, uninterruptible power supplies as well as photovoltaic inverters for sustainable energy production.

The merged PiN Schottky (MPS) structure of these devices provides additional advantages over similar competing SiC diodes, including outstanding robustness against surge currents. This eliminates the need for additional protection circuitry, thereby significantly reducing system complexity and enabling hardware designers to achieve higher efficiency with smaller form factors in rugged high-power applications. Nexperia’s consistent quality across various semiconductor technologies provides designers with confidence in the reliability of these diodes.

In addition, Nexperia’s ‘thin SiC’ technology delivers a thinner substrate (one-third of its original thickness) which dramatically reduces the thermal resistance from the junction to the back-side metal. This results in lower operating temperature, higher reliability and device lifetime, higher surge current capability, and lower forward voltage drop.

“We’ve seen an excellent market response to the initial release of our SiC diodes. They have proven themselves in design-ins with one notable example in power supplies for industrial applications, where customers have achieved especially good results. The superior reverse recovery of these diodes translates to high efficiency in real-world use”, says Katrin Feurle, Senior Director and Head of Product Group SiC Diodes & FETs at Nexperia. “We are particularly excited that this is our first automotive-qualified product, and it is already recognized by major automotive players for its performance and reliability.”

About Nexperia

Headquartered in the Netherlands, Nexperia (nexperia.com) is a global semiconductor company with a rich European history and over 14,000 employees across Europe, Asia, and the United States. As a leading expert in the development and production of essential semiconductors, Nexperia’s components enable the basic functionality of virtually every commercial electronic design in the world from automotive and industrial to mobile and consumer applications.

The company serves a global customer base, shipping more than 100 billion products annually. These products are recognized as benchmarks in efficiency in process, size, power, and performance. Nexperia's commitment to innovation, efficiency, sustainability, and stringent industry requirements is evident in its extensive IP portfolio, its expanding product range, and its certification to IATF 16949, ISO 9001, ISO 14001 and ISO 45001 standards.

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Nexperia’s Portfolio of 650 V SiC Diodes Now Addresses Automotive and A Wider Range of Industrial Applications

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SiC Diodes | Nexperia
Contact: Anne Proch - Nexperia.com 
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