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Imec Reports Ultra-thin Solar Blind EUV Imager - At the International Electron Devices Meeting in San Francisco imec presents an ultra-thin hybrid AlGaN-on-Si-based extreme ultraviolet (EUV) imager with only 10µm pixel-to-pixel pitch
Imec Reports Ultra-thin Solar Blind EUV Imager

 

PRZOOM - /newswire/ - San Francisco, CA, United States, 2010/12/08 - At the International Electron Devices Meeting in San Francisco imec presents an ultra-thin hybrid AlGaN-on-Si-based extreme ultraviolet (EUV) imager with only 10µm pixel-to-pixel pitch.

   
 
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The wide-bandgap material (AlGaN) provides insensitivity to visible wavelengths and enhanced UV radiation hardness compared to silicon. Backside illumination in a hybrid design was used to achieve a very small pitch-to-pitch (10µm only). The novel imager shows an excellent detection down to a wavelength of 1nm.

Ultraviolet detection is of particular interest for solar science, EUV microscopy and advanced EUV lithography tools. Sensors using wide-bandgap materials overcome the drawbacks of Si-based sensors such as their sensitivity to UV radiation damage and the need for filters to block the unnecessary visible and infrared radiation.

Imec’s backside illuminated EUV imager is based on a state-of-the-art hybrid design integrating an AlGaN sensor on a silicon readout chip. A submicron thick AlGaN layer was grown on a Si(111) wafer using molecular beam epitaxy and a focal plane array of 256x256 pixels with a pixel-to-pixel pitch of 10 micron was processed. Each pixel contains a Schottky diode optimized for backside illumination. A custom read-out chip, based on capacitance transimpedance amplifiers, was fabricated in 0.35µm CMOS technology. The AlGaN wafer and read-out chip were post-processed with indium solder bumps with 10µm pixel-to-pixel pitch achieving excellent uniformity. The focal plane array and read-out chip were assembled using flip-chip bonding and subsequently the silicon substrate was locally removed to enable backside illumination of the active AlGaN layer. Finally, the imager was packaged and wire-bonded. Measurements demonstrated an excellent response down to a wavelength of 1nm.

These results were obtained in collaboration with CRHEA/CNRS (France) and the Royal Observatory of Belgium in the framework of the BOLD project of the European Space Agency (ESA).

About imec
Imec performs world-leading research in nanoelectronics. Imec leverages its scientific knowledge with the innovative power of its global partnerships in ICT, healthcare and energy. Imec delivers industry-relevant technology solutions. In a unique high-tech environment, its international top talent is committed to providing the building blocks for a better life in a sustainable society.

Imec (imec.be) is headquartered in Leuven, Belgium, and has offices in Belgium, the Netherlands, Taiwan, US, China and Japan. Its staff of more than 1,750 people includes over 550 industrial residents and guest researchers. In 2009, imec's revenue (P&L) was 275 million euro.

Imec is a registered trademark for the activities of IMEC International (a legal entity set up under Belgian law as a "stichting van openbaar nut”), imec Belgium (imec vzw supported by the Flemish Government), imec the Netherlands (Stichting imec Nederland, part of Holst Centre which is supported by the Dutch Government), imec Taiwan (imec Taiwan Co.) and imec China (IMEC Microelectronics (Shangai) C. Ltd.).

 
 
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Imec Reports Ultra-thin Solar Blind EUV Imager

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Imec |
Contact: Katrien Marent - imec.be 
+32 474 30 28 66 katrien.marent[.]imec.be
 
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IMPORTANT INFORMATION: Issuance, publication or distribution of this press release in certain jurisdictions could be subject to restrictions. The recipient of this press release is responsible for using this press release and the information herein in accordance with the applicable rules and regulations in the particular jurisdiction. This press release does not constitute an offer or an offering to acquire or subscribe for any Imec securities in any jurisdiction including any other companies listed or named in this release.

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