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OnChip Introduces Submounts to Improve Efficiency of HB LED - OnChip offers Silicon and Ceramic Carriers or Submounts that greatly improve the performance of High Brightness Light Emitting Diodes
OnChip Introduces Submounts to Improve Efficiency of HB LED

 

PRZOOM - /newswire/ - Santa Clara, CA, United States, 2009/09/25 - OnChip offers Silicon and Ceramic Carriers or Submounts that greatly improve the performance of High Brightness Light Emitting Diodes.

   
 
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A global leader in Integrated Passive Devices (IPD), OnChip today announced the ability to provide Silicon and Ceramic Carriers or Submounts for HB LED (High Brightness Light Emitting Diode) manufacturers. With major advantages of power savings, increased life expectancy and faster response time over traditional bulbs, HB LEDs are rapidly taking over many applications such as LCD backlighting, traffic lights, automotive lighting, camera flash and even standard lighting. HB LEDs are more efficient and longer lasting than both incandescent and CFLs.

HB LEDs are predominantly built with Indium Gallium Nitride (InGaN) technology. LEDs using InGaN come with several design challenges such as electrostatic discharge (ESD) sensitivity and package thermal coefficient of expansion (TCE) issues. InGaN chips are generally considered Class 1 devices and in many cases, a discharge of only 10 Volts can destroy such sensitive components. In comparison, static charge of up to 30,000 Volts is not uncommon and can be generated quite easily. Studies indicate that ESD damage to electronics and associated equipment is estimated at over $10 billion annually. ESD-damaged LEDs can appear dim, dead, shorted, or have low Vf or Vr. TCE mismatch between the LED chip and the lead-frame or package is another significant reliability threat. OnChip addresses both problems with these new submount offerings. OnChip produces silicon and ceramic submount that serves as an inter-poser between the InGaN chip and the lead-frame. Submounts reduce the TCE mismatch, while providing ESD protection via integrated zener diodes. Ceramics are ideal for High Power LEDs and OnChip offers both Aluminum Oxide and Aluminum Nitride materials. The Company also provides miniature silicon ESD diodes that can be mounted alongside the LED chips.
These ESD diodes are available both as flip chips - ESD0201 and as single-wire bond chips - ESD8x8. Submounts offer optical benefits as well. These devices contain solder bumps, enabling flip chip assembly of the LED chip. This approach eliminates shadows caused by wire-bonding. Furthermore, submounts offer a reflective metal surface which help direct the light in the desired direction.

Availability and Pricing
OnChip Silicon and Ceramic are typically built to customer specifications. Pricing varies depending on the size of the Submount. Lead-time is 6 to 8 weeks upon receipt of order and customer’s final specifications. Developed at the OnChip Santa Clara facility, these components are produced to the highest quality standards.

About OnChip Devices

OnChip Devices (onchip.com) head-quartered in Santa Clara, CA is a global leader in Integrated Passive Devices. With an advanced silicon fabrication facility and strong partnerships with full turn-key assembly houses in Asia, OnChip is offering state-of-the-art silicon and ceramic solutions for High-brightness LED, Computing and Consumer Electronics.

 
 
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Agency / Source: OnChip Devices, Inc.

 
 

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OnChip Introduces Submounts to Improve Efficiency of HB LED

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Contact: Ashok Chalaka - OnChip.com 
408-540-6365 sales[.]onchip.com
 
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IMPORTANT INFORMATION: Issuance, publication or distribution of this press release in certain jurisdictions could be subject to restrictions. The recipient of this press release is responsible for using this press release and the information herein in accordance with the applicable rules and regulations in the particular jurisdiction. This press release does not constitute an offer or an offering to acquire or subscribe for any OnChip Devices, Inc. securities in any jurisdiction including any other companies listed or named in this release.

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