Free press releases distribution network?

Agency / Source: Infineon Technologies AG

Check Ads Availability|e-mail Article


Are you the owner of this article?, Turn it PREMIUM with your LOGO instead - and make it 3rd party Ads-Free! within the next hour!



Infineon Introduces GaN Devices for Mobile Base Station Transmitters, Charts Path to 5G Cellular Infrastructure - Infineon Technologies AG introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year's European Microwave Week - Infineon.com
Infineon Introduces GaN Devices for Mobile Base Station Transmitters, Charts Path to 5G Cellular Infrastructure

 

PRZOOM - /newswire/ - Munich, Germany, 2015/09/08 - Infineon Technologies AG introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year's European Microwave Week - Infineon.com. FSE: IFX; OTCQX: IFNNY

   
 
Your Banner Ad Here instead - Showing along with ALL Articles covering Telecom/Wireless/VoIP/IPTV Announcements

Replace these Affiliate Programs at ANYTIME! Your banner here within the next hour. Learn How!

World needs to know about google malpractices - Share your Adsense publishers stories on Google tactics to steal your revenues

 

As part of Infineon’s industry-leading GaN portfoliothe devices allow manufacturers of mobile base stations to build smaller, more powerful and more flexible transmitters. With higher efficiency, improved power density and more bandwidth than currently used RF power transistors, the new devices improve the economics of building infrastructure to support today’s cellular networks. Additionally, they will pave the way for the transition to 5G technology with higher data volumes and thus, enhanced user-experience.

“This new device family combines innovation with knowledge of the application requirements for cellular infrastructure to provide our global customer base with next-generation RF power transistors. They allow significant improvement in the operating performance and reduction in size of the transmitter side of mobile base stations,” said Gerhard Wolf, Vice President and General Manager of Infineon’s RF Power product line. “Additionally, with the transition to wide bandgap semiconductor technology, we are setting the pace for the continued evolution of the cellular infrastructure.”

The new RF power transistors leverage the performance of GaN technology to achieve ten percent higher efficiency and five times the power density of the LDMOS transistors commonly used today. This translates to smaller footprints and power requirements for the power amplifiers (PA) of base station transmitters in use today, which operate in either the 1.8-2.2 GHz or 2.3-2.7 GHz frequency range. Future GaN on SiC devices will also support 5G cellular bandsup to the 6 GHz frequency range. This roadmap allows Infineon to build on its long-standing expertise and state-of-the-art production technologies for RF transistor technology.

Design flexibility and support for the next-generation of 4G technology are additional benefits of GaN devices for RF power applications. The new devices have twice the RF bandwidth of LDMOS, so that one PA can support multiple operating frequencies. They also have increased instantaneous bandwidth available for transmitters, which lets a carrier offer higher dates using the data aggregation technique specified for 4.5G cellular networks.

Availability
Engineering samples and reference designs are available to customers under specific Non-Disclosure Agreements (NDA).Further information on the GaN RF power transistors is available at infineon.com/rfpower.

Industry Leading GaN Technology Portfolio
Earlier this year, Infineon described its broadened patent portfolio related to GaN and announced the expansion of its GaN-on-Silicon (GaN/Si) offering, GaN/Si epitaxy process and 100 V-600 V technologies resulting from the acquisition of International Rectifier. The company also announced a strategic partnership aimed at integrating enhancement mode GaN-on-Silicon transistor structure into Infineon’s Surface Mount Device (SMD) packages, providing a highly efficient, easy-to-use 600 V GaN power device with the added benefit of dual sourcing.

As a result, Infineon now offers customers complete system know-how combined with the most comprehensive range of GaN technologies and products in the industry. Additionally, the company holds best-in-class manufacturing capabilities, volume capacity and second sourcing for normally-off GaN power devices in an Infineon SMD package. With leading LDMOS and GaN technologies, Infineon is well positioned to provide optimal solutions based on customers’ requirements.

Infineon at European M icrowave Week (EuMW)
Infineon is showcasing its RF power transistor technology at Booth C309, in Hall Ternes during EuMW in Paris, September 6-11, 2015.

About Infineon
Infineon Technologies AG (infineon.com) is a world leader in semiconductor solutions that make life easier, safer and greener. Microelectronics from Infineon is the key to a better future. In the 2014 fiscal year (ending September 30), the company reported sales of Euro 4.3 billion with about 29,800 employees worldwide. In January 2015, Infineon acquired US-based International Rectifier Corporation with revenues of USD 1.1 billion (fiscal year 2014 ending June 29) and approximately 4,200 employees.

Information Number: INFPMM201509-077

 
 
Your Banner Ad Here instead - Showing along with ALL Articles covering Telecom/Wireless/VoIP/IPTV Announcements

Replace these Affiliate Programs at ANYTIME! Your banner here within the next hour. Learn How!

World needs to know about google malpractices - Share your Adsense publishers stories on Google tactics to steal your revenues

 

Agency / Source: Infineon Technologies AG

 
 

Availability: All Regions (Including Int'l)

 

Traffic Booster: [/] Quick PRZOOM - Press & Newswire Visibility Checker

 

Distribution / Indexing: [+] / [Company listed above is a registered member of our network. Content made possible by PRZOOM / PRTODAY indexing services]

 
 
# # #
 
 
  Your Banner Ad showing on ALL
Telecom/Wireless/VoIP/IPTV articles,
CATCH Visitors via Your Competitors Announcements!


Infineon Introduces GaN Devices for Mobile Base Station Transmitters, Charts Path to 5G Cellular Infrastructure

Company website links NOT available to basic submissions
It is OK to republish and/or LINK any newswire for any legitimate media purpose as long as you name PRZOOM - Press & Newswire and LINK as the source.
 
  For more information, please visit:
Is this your article? Activate ALL web links by Upgrading to Press Release PREMIUM Plan Now!
GaN RF Power Transistors | Infineon Technologies AG
Contact: Fabian Schiffer - Infineon.com 
+49 89 23425869 fabian.schiffer[.]infineon.com
 
PRZOOM / PRTODAY - Newswire Today disclaims any content contained in this article. If you need/wish to contact the company who published the current release, you will need to contact them - NOT us. Issuers of articles are solely responsible for the accuracy of their content. Our complete disclaimer appears here.
IMPORTANT INFORMATION: Issuance, publication or distribution of this press release in certain jurisdictions could be subject to restrictions. The recipient of this press release is responsible for using this press release and the information herein in accordance with the applicable rules and regulations in the particular jurisdiction. This press release does not constitute an offer or an offering to acquire or subscribe for any Infineon Technologies AG securities in any jurisdiction including any other companies listed or named in this release.

Telecom/Wireless/VoIP/IPTV via RSSAdd NewswireToday - PRZOOM Headline News to FeedBurner
Find who RetweetFollow @NewswireTODAY



Are you the owner of this article?, Turn it PREMIUM with your LOGO instead - and make it 3rd party Ads-Free! within the next hour!




Read Latest Press Releases From Infineon Technologies AG / Company Profile


Read Telecom/Wireless/VoIP/IPTV Most Recent Related Press Releases:

Nokia Receives the New Product Innovation Award at Frost & Sullivan’s Awards Gala Honouring Best-in-Class Companies
Qualcomm Begins Commercial Sampling of World’s First 10nm Server Processor and Reshapes the Future of Datacenter Computing
Grandstream Releases a New WiFi Access Point for Beta Testing
IDC MarketScape Names HCL a Leader for Worldwide Internet of Things Consulting and Systems Integration Services
India’s First Payments Bank Goes LIVE-Airtel Payments Bank Starts Pilot Services in Rajasthan
Grandstream Introduces New Mid-Range IP Phones
Qualcomm and Samsung Collaborate on 10nm Process Technology for the Latest Snapdragon 835 Mobile Processor
Axiata Announces Completion of Bangladesh’s First Telecoms Merger with Bharti Airtel
NEC Develops 5G Massive-element Active Antenna System that Supports 28GHz Band
Grandstream Expands into WiFi Market with New Managed WiFi Access Point

Boost Your Social Network
& Crowdfunding Campaigns


LIFETIME SOCIAL MEDIA WALL
 
NewswireToday Celebrates 10 Years in Business
Find business coaching, life coaching, executive coaching and corporate coaching, best selling coaching books, ...



PREMIUM Members


Visit  BizJobs.com

Visit  La Bella Bakery Artisan Bakery Arizona

Visit  Triggr & Bloom







 
  ©2016 PRZOOM — Limelon Advertising, Co.
Home | About PRZOOM | Advertise/Pricing | Contact | Investors | Privacy/TOS | Sitemap | FRANCAIS
newswire, PR free press releases distribution service magazines engine news alert newsroom press room breaking news public relations articles company news alerts newswiredistribution ezine bizentrepreneur biznewstoday digital business report market search pr firms agencies reports distri-bution today investor relation successful internet entrepreneur newswire distribution prtoday.com freenewswiredistribution asianewstoday bizwiretoday USA pr UK today