Its executives, scientists and researchers will present 16 papers, three of which are invited papers, covering research topics ranging from advanced logic and memory devices, 3D integration and optical input/output, to novel CMOS-based image sensor systems and thin-film transistors.
“Imec’s presence at IEDM2014 is remarkable and rewarding for our researchers, while representing a confirmation of imec’s leading global position,” said Luc Van den hove, CEO at imec. “We strive to stay at the forefront of research while supporting our global partner network with innovative solutions in semiconductor scaling as well as with innovative solutions in the domain of image sensors and thin-film microelectronics.”
One of the highlights is the demonstration of the first 10Gb/s silicon-integrated graphene electro-absorption modulator for chip-level optical interconnects. Moreover, imec will present significant progress with respect to Ge FinFET development with the first industry-compatible inversion-mode relaxed Ge n-FinFET scaled down to 15nm fin width and sub-40nm gate length. Additional technical papers will showcase progress made in understanding the mechanisms influencing RRAM and its selector performance and reliability. Imec will also present a perpendicular magnetic tunnel junction (MTJ) for spin-transfer torque magnetic random access memory (STT-MRAM) devices at sub-20nm technology nodes. In the thin-film electronics session, imec will present an industry first thin-film ultralow power transponder on foil paving the way to Internet-of-Things sensing applications.
The full list of imec’s papers at IEDM 2014 include:
Advanced Memory Scaling
• “6.8 High-Drive Current (>1MA/cm2) and Highly Nonlinear (>1000) TiN/Amorphous-Silicon/TiN Scalable Bidirectional Selector with Excellent Reliability and Its Variability Impact on the 1S1R Array Performance,” L. Zhang et al., imec and KU Leuven
• “14.1 Progressive vs. Abrupt Reset Behavior in Conductive Bridging Devices : a C-AFM Tomography Study,” Celano et al, imec, University of Gent and Università “La Sapienza”
• “14.2 Understanding the Impact of Programming Pulses and Electrode Materials on the Endurance Properties of Scaled Ta2O5 RRAM Cells,” Chen et al., imec
• “19.1 Co/Ni Based p-MTJ stack for sub-20nm High Density Stand Alone and High Performance Embedded Memory Application,” Kar et al., imec
Advanced Logic Scaling
• “16.5 First Demonstration of 15nm-WFIN Inversion-Mode Relaxed-Germanium n-FinFETs with Si-cap Free RMG and NiSiGe Source/Drain,” Mitard et al., imec
• “20.2 RTN and PBTI-induced Time-Dependent Variability of Replacement Metal-Gate High-k InGaAs FinFETs,” Franco et al., imec, T.U. Wien and KU Leuven
• “20.4 Gated and STI Defined ESD Diodes in Advanced Bulk FinFET Technologies”, Chen et al, imec, TSMC and KU Leuven
• “30.2 Perspective of Tunnel-FET for Future Low-power Technology Nodes,” Verhulst et al, imec; invited paper
• “32.3 A New High-k/metal Gate CMOS Integration Scheme (Diffusion and Gate Replacement) Suppressing Gate Height Asymmetry and Compatible with High-thermal Budget Memory Technologies,” Ritzenthaler et al, imec, Micron and SK-Hynix
• “34.2 NBTI of Ge pMOSFETs: Understanding Defects and Enabling Lifetime Prediction,” Ma at al, Liverpool John Moores University and imec
• “34.4 BTI Reliability of Advanced Gate Stacks for Beyond-Silicon Devices: Challenges and Opportunities,” Groeseneken et al., imec; invited paper
• “5.6 Broadband 10Gb/s Graphene Electro-Absorption Modulator on Silicon for Chip-Level Optical Interconnects,” Hu et al., imec and Ghent University
• “7.1 Impact of 3D Integration on 7nm High Mobility Channel Devices Operating in the Ballistic Regime,” Guo et al, imec and Synopsys, Inc.
Image Sensor Systems
• “4.6 Enhanced Time Delay Integration Imaging using Embedded CCD in CMOS Technology,” De Moor et al, imec
• “10.5 A CMOS-compatible, Integrated Approach to Hyper- and Multispectral Imaging,” Lambrechts et al, imec; invited paper
Thin-film Transistor Circuits
• “26.1 Ultralow Power Transponder in Thin Film Circuit Technology on Foil with sub - 1V Operation Voltage,” Ke et al, imec and KU Leuven
For more information, attend imec’s presentations at IEDM 2014
Imec (imec.be) performs world-leading research in nanoelectronics. Imec leverages its scientific knowledge with the innovative power of its global partnerships in ICT, healthcare and energy. Imec delivers industry-relevant technology solutions. In a unique high-tech environment, its international top talent is committed to providing the building blocks for a better life in a sustainable society. Imec is headquartered in Leuven, Belgium, and has offices in the Netherlands, Taiwan, US, China, India and Japan. Its staff of over 2,080 people includes more than 670 industrial residents and guest researchers. In 2013, imec's revenue (P&L) totaled 332 million euro.
Imec is a registered trademark for the activities of IMEC International (a legal entity set up under Belgian law as a "stichting van openbaar nut”), imec Belgium (IMEC vzw supported by the Flemish Government), imec the Netherlands (Stichting IMEC Nederland, part of Holst Centre which is supported by the Dutch Government), imec Taiwan (IMEC Taiwan Co.) and imec China (IMEC Microelectronics (Shanghai) Co. Ltd.) and imec India (Imec India Private Limited).