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Infineonís 700W L-Band Transistor with Highest-in-Industry Output Power Reduces BOM and Provides Higher Reliability and Ruggedness - Infineon Technologies AG today introduced its 700W L-Band RF power transistor featuring the highest-in-industry L-Band output power (700W) available for radar systems operating in the 1200 1400 MHz frequency range - Infineon.com
Infineonís 700W L-Band Transistor with Highest-in-Industry Output Power Reduces BOM and Provides Higher Reliability and Ruggedness

 

PRZOOM - /newswire/ - Neubiberg, Germany, 2014/03/24 - Infineon Technologies AG today introduced its 700W L-Band RF power transistor featuring the highest-in-industry L-Band output power (700W) available for radar systems operating in the 1200 1400 MHz frequency range - Infineon.com. FSE: IFX; OTCQX: IFNNY

   
 
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By lowering part counts, the new device can reduce system cost and improve reliability while maintaining high ruggedness.

Radar systems emit a high-powered electronic pulse within a specific frequency range and detect the return echoes of each pulse to form an image of distant objects. In this demanding application, the transistors used in the power supply of these pulsed systems must be highly efficient and capable of driving a stable signal in all operating conditions.

Infineonís new power transistor, PTVA127002EV, is well-suited for L-Band radar systems used in air traffic control and weather observation applications. High efficiency corresponds with low heat output, and high ruggedness (ability to withstand 10:1 VSWR load mismatch) further contributes to the advantages of low component count made possible by the 700W output.

Based on the companyís 50V LDMOS power transistor technology, the PTVA127002EV exhibits excellent efficiency; typically 55 percent across the 1200-1400 MHz band, with a P1dB output power of 700W, 16dB gain and low thermal resistance characteristics when measured with a 300 ĶS 10% duty cycle pulse.

With the new addition, Infineon now offers a family of RF power transistors for 1200 1400 MHz system applications with rated power output of 25W, 50W, 350W and 700W. In addition to ruggedness, common specifications for each device include wide gate source voltage range (-6V to 12V), and integrated electrostatic discharge (ESD) protection.

Availability
Engineering samples and an evaluation board are available now. Additional technical information on the complete portfolio of Infineon RF Power transistors and integrated RF power amplifiers is available at infineon.com/rfpower

About Infineon

Infineon Technologies AG (infineon.com), Neubiberg, Germany, offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, mobility, and security. In the 2013 fiscal year (ending September 30), the Company reported sales of Euro 3.84 billion with around 26,700 employees worldwide. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY).

Information Number: INFPMM201403.031

 
 
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Infineonís 700W L-Band Transistor with Highest-in-Industry Output Power Reduces BOM and Provides Higher Reliability and Ruggedness

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L-Band-Transistor-PTVA12 | Infineon Technologies AG
Contact: Tillmann Geneuss - Infineon.com 
+49 89 23483346 tillmann.geneuss[.]infineon.com
 
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IMPORTANT INFORMATION: Issuance, publication or distribution of this press release in certain jurisdictions could be subject to restrictions. The recipient of this press release is responsible for using this press release and the information herein in accordance with the applicable rules and regulations in the particular jurisdiction. This press release does not constitute an offer or an offering to acquire or subscribe for any Infineon Technologies AG securities in any jurisdiction including any other companies listed or named in this release.

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