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Infineon Broadens RF Portfolio with New Transistors for UHF TV Power Amplifiers - Infineon Technologies AG introduced 50V LDMOS transistors designed for use in UHF TV broadcast transmitters, including one device providing the highest peak power output available for this application [FSE: IFX / OTCQX: IFNNY] - Infineon.com
Infineon Broadens RF Portfolio with New Transistors for UHF TV Power Amplifiers

 

PRZOOM - /newswire/ - Nuremberg, Germany, 2013/10/10 - Infineon Technologies AG introduced 50V LDMOS transistors designed for use in UHF TV broadcast transmitters, including one device providing the highest peak power output available for this application [FSE: IFX / OTCQX: IFNNY] - Infineon.com. FSE: IFX; OTCQX: IFNNY

   
 
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Today at the European Microwave Week tradeshow, Infineon Technologies AG introduced 50V LDMOS transistors designed for use in UHF TV broadcast transmitters, including one device providing the highest peak power output available for this application. The higher power output across the entire 470 806 MHz TV broadcast band gives amplifier designers the option to use fewer transistors to achieve target output power, which translates to cost savings due to lower component count and higher reliability as a result of simpler design.

The high power PTVA047002EV has a rated power output of 135W average, which is eight percent greater than other available devices, with a DVB-T (8k OFDM) signal, and 17.5dB gain. For a broadcast amplifier design of 12KW, the increased power can eliminate up to 20 RF power transistors representing a significant reduction in total system cost while increasing reliability due to simpler, lower component count design. The lower power PTVA042502EC and PTVA042502FC transistors provide 55W average output power and 18.5dB gain with a DVB-T (8k OFDM) signal, which makes them well-suited for applications such as gap fillers.

Excellent efficiency, typically 26 percent at 500MHz, reduces heat output. This is complemented by low thermal resistance (Rth 0.20 degree C/Watt) of the package, a characteristic of Infineon’s 50V LDMOS technology that allows for better thermal management and smaller heat sink designs. This further contributes to lower cost and higher reliability.

Other important features shared by all Infineon 50V LDMOS transistors include high ruggedness (able to withstand 10:1 VSWR load mismatch with 3dB input overdrive), wide gate source voltage range (-6V to 12V), and integrated ESD protection.

Availability and Packaging
Engineering samples of the new UHF TV broadcast power transistors are available now, with production ramp beginning in this calendar quarter for the PTVA042502EC and PTVA042502FC. Production ramp for the PTVA047002EV is planned for the first quarter of 2014. Complete reference design/evaluation board kits, including Gerber files and related documentation, also are available.

The PTVA047002EV is available in an open-cavity 275-style package with eared flange. The PTVA042502EC and PTVA042502FC are available in an open-cavity 248-style package with eared and earless flange respectively.

Additional technical information on the complete portfolio of Infineon RP Power transistors and integrated RF power amplifiers is available at infineon.com/rfpower.

About Infineon

Infineon Technologies AG (infineon.com), Neubiberg, Germany, offers semiconductor and system solutions addressing three central challenges to modern society: energy efficiency, mobility, and security. In the 2012 fiscal year (ending September 30), the Company reported sales of Euro 3.9 billion with close to 26,700 employees worldwide. Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the over-the-counter market OTCQX International Premier (ticker symbol: IFNNY).

Information Number: INFPMM201310.002

 
 
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Infineon Broadens RF Portfolio with New Transistors for UHF TV Power Amplifiers

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50V LDMOS transistors | Infineon Technologies AG
Contact: Tillmann Sonntag - Infineon.com 
+49 89 23483346 tillmann.geneuss[.]infineon.com
 
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IMPORTANT INFORMATION: Issuance, publication or distribution of this press release in certain jurisdictions could be subject to restrictions. The recipient of this press release is responsible for using this press release and the information herein in accordance with the applicable rules and regulations in the particular jurisdiction. This press release does not constitute an offer or an offering to acquire or subscribe for any Infineon Technologies AG securities in any jurisdiction including any other companies listed or named in this release.

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