PRZOOM - /newswire/ -
Bala Cynwyd, PA, United States, 2012/10/11 - Micro Oscillator, Inc. family of high side precision current sensor system containing shunt resistor replaces current sense amplifiers and external shunt resistors. The sMart shunt maintains accuracy over a broader temperature range of -40C to 125C.
Micro Oscillator Inc. (MOI) micro-oscillator.com/products.html announced a patent pending sMart shunts Family that provides a high precision voltage, and 20mA current loop output. This unique family of high side precision current sensor system with built in shunt resistor replaces current sense amplifiers with external shunt resistors in a versatile SIP or DIN Rail mountable Hockey Puck. The sMart shunt maintains accuracy over a broader temperature range in a small profile package operating at temperatures of -40C to 85 C and -40C to 125C is also available. In most cases, no calibration is required; simply connect the sMart shunts output to the DVM, or current loop circuit. The accuracy is 100% tested over an extended temperature range and High Side measurements don’t require an additional supply. The increased performance, and combined functionality in a small profile package comes without increasing system cost.
The MOI sMart shunts Family has multiple output versions: Voltage Output with Low Supply Voltage (2.7V-5V), 200mV, & 2 Volt Meter Compatible Versions, and 20mA Current Loop Compatible Versions. There are Low Supply Voltage (2.7V-5V) & high voltage (5V-30V), (5V-40V) versions for Industrial, Military, or Down Hole markets.
Advantages of the MOI sMart shunts Family include High Side Measurements, 0.2% Total Accuracy over the specified temperature range and broader temperature range than Manganin based shunts. Elimination of system calibration or an additional supply voltage provides total system cost savings.
The products consist of 0.2% accurate versions at -40C to 85C, 20mA Full Scale Input, and a 40mV Shunt Resistor Voltage. MOI–HSCS–20mA5VI is a 2 Volt Full Scale Output, and 2.7-5Volt Supply Voltage SIP Package. The MOI–HSCS–20mA, 40VI, is a 2 Volt Full Scale Output, and 5-40Volt Supply Voltage version in a Hockey Puck Package. MOI–HSCS–20mA30VICL is a 20mA Current Loop Full Scale Output version for transmitting data over long lead lengths, with a 5-30Volt Supply Voltage in a Hockey Puck Package.
Available also are 0.4% accurate versions at -40C to 85C, 20mA Full Scale Input, and 40mv Shunt Resistor Voltage. MOI–HSCS–200mA30VICL has a 20mA Current Loop Full Scale Output, and 5-30 Volt Supply Voltage in a Hockey Puck Package.
Customer specified parameters to meet specific application requirements are available.
About Micro Oscillator, Inc. (MOI)
Micro Oscillator, Inc. (micro-oscillator.com) is expanding its product offering to include new families of Endurance Analog Products. One of those Endurance Analog Product Families is the sMart shunt Family – a High Side Precision Current Sensor System Containing a Shunt Resistor.
In the same way that MOI revolutionized the way that micro controllers are clocked with its all-silicon CMOS based clock oscillators; a similar breakthrough technology design approach has been used to spawn a new family of patented and patent pending Endurance Analog Products. The new Endurance Analog Products are full spectrum solutions for extreme environments utilizing innovative low complexity circuits. At the heart of these new products are MOI’s patented and patent pending sensor circuit technologies. From consumer to the most harsh down hole applications, MOI Endurance Analog Products are making it easier to implement more cost effective analog solutions.
MOI Endurance Analog Products consist of Current Sensors, Proximity Sensors with inductive, capacitive or resistive inputs, Voltage References, DC to DC Converters, and other breakthrough technologies not yet announced. MOI Endurance Analog Products can be manufactured as small form factor modules or implemented in most semiconductor processes using materials ranging from silicon to silicon carbide as bipolar, CMOS, JFET or other transistor structures. Both the module and semiconductor implementations have the ability to be customized to specific applications.